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| Datasheet File OCR Text: |
| NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) D Monolithic Construction w/Built-In Base-Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Emitter-Collector Forward Voltage Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) VECF Cob ton tstg tf Test Conditions VCB = 600V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 2A VCE = 2V, IC = 4A IC = 4A, IB = 40mA IC = 4A, IB = 40mA IE = 4A, IB = 0 VCB = 50V, IE = 0, f = 1MHz VCC = 100V, IB1 = -IB2 = 40mA, Duty Cycle 1% Min - - 400 600 100 - - - - - - - Typ - - - - - - - - 35 1 8 5 Max Unit 0.5 3 - - - 2.0 2.5 3.0 - - - - V V V pF s s s mA mA V V(BR)CEO IC = 10mA, IB = 0 Darlington Internal Schematic C B E .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max |
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